2. 30? 0. 05 1. 25? 0. 05 1 . 3 0 ? 0 . 0 3 0 . 3 0 2 . 0 0 ? 0 . 0 5 1 . 0 1 r e f MMST3904 transistor (npn) features power dissipation p cm : 0.2 w (tamb=25 ) collector current base i cm: 0.2 a collector-base voltage v (br)cbo : 60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo ic= 10 a, i e =0 60 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma, i b =0 40 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c =0 5 v collector cut-off current i cbo v cb = 60v, i e =0 0.1 a collector cut-off current i ceo v ce = 40v, i b =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a h fe(1) v ce = 1v, i c = 10ma 100 300 dc current gain h fe(2) v ce = 1v, i c = 50ma 60 collector-emitter saturation voltage v ce (sat) i c =50 ma, i b = 5ma 0.3 v base-emitter saturation voltage v be (sat) i c = 50 ma, i b = 5ma 0.95 v transition frequency f t v ce = 20v, i c = 10ma f= 100mhz 250 mhz output capacitance c ob v cb =5v, i e = 0 f= 1mhz 4 pf delay time t d 35 ns rise time t r v cc =3v, v be =0.5v i c =10ma , i b1 =1ma 35 ns storage time t s 200 ns fall time t f v cc =3v, i c =10ma i b1 = i b2 = 1ma 50 ns marking k2n unit: mm sot-323 1. base 2. emitter 3. collector MMST3904 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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